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| MUR20100, MUR20120 Ultra Fast Recovery Diodes Dimensions TO-220AC A C(TAB) A C C Dim. A B C D E F G H J K L M N Q A=Anode, C=Cathode, TAB=Cathode VRSM V 1000 1200 VRRM V 1000 1200 MUR20100 MUR20120 Inches Min. Max. 0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 2.300 0.420 0.100 0.135 0.045 0.070 0.250 0.025 0.035 0.190 0.210 0.140 0.190 0.015 0.022 0.080 0.115 0.025 0.055 Milimeter Min. Max. 12.70 14.73 14.23 16.51 9.66 10.66 3.54 4.08 5.85 6.85 2.54 3.42 1.15 1.77 6.35 0.64 0.89 4.83 5.33 3.56 4.82 0.38 0.56 2.04 2.49 0.64 1.39 Symbol IFRMS IFAVM IFRM Test Conditions TVJ=TVJM TC=85oC; rectangular, d=0.5 tp<10us; rep. rating, pulse width limited by TVJM TVJ=45oC t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine Maximum Ratings 70 17 220 130 140 110 120 85 80 60 60 -40...+150 150 -40...+150 Unit A IFSM TVJ=150oC TVJ=45oC A I2t TVJ=150oC A2s TVJ TVJM Tstg Ptot Md Weight TC=25oC Mounting torque o C 78 0.4...0.6 2 W Nm g MUR20100, MUR20120 Ultra Fast Recovery Diodes Symbol Test Conditions TVJ=25oC; VR=VRRM TVJ=25oC; VR=0.8.VRRM TVJ=125oC; VR=0.8.VRRM IF=12A; TVJ=150oC TVJ=25oC For power-loss calculations only TVJ=TVJM Characteristic Values typ. max. 750 250 7 1.87 2.15 1.65 18.2 1.6 60 Unit uA uA mA V V m K/W ns A IR VF VTO rT RthJC RthJA trr IRM IF=1A; -di/dt=100A/us; VR=30V; TVJ=25oC _ VR=540V; IF=20A; -diF/dt=100A/us; L<0.05uH; TVJ=100 C o 40 7 60 FEATURES * International standard package * Glass passivated chips * Very short recovery time * Extremely low losses at high switching frequencies * Low IRM-values * Soft recovery behaviour APPLICATIONS * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating and melting * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders ADVANTAGES * High reliability circuit operation * Low voltage peaks for reduced protection circuits * Low noise switching * Low losses * Operating at lower temperature or space saving by reduced cooling MUR20100, MUR20120 Ultra Fast Recovery Diodes 70 A 60 50 4 IF 40 30 20 10 0 0 1 VF 2 3V 4 1 0 1 10 -diF/dt 100 A/us 1000 TVJ= 25C TVJ=100C TVJ=150C Qr 3 2 max. 6 uC 5 TVJ=100C VR= 540V 50 A 40 IF=30A IF=60A IF=30A IF=15A IRM TVJ=100C VR= 540V max. IF=30A IF=60A IF=30A IF=15A 30 20 typ. 10 typ. 0 0 200 -diF/dt 400 A/us 600 Fig. 1 Forward current versus voltage drop. 1.4 1.2 1.0 Kf 0.8 0.6 Fig. 2 Recovery charge versus -diF/dt. Fig. 3 Peak reverse current versus -diF/dt. 60 V 50 VFR 40 30 20 tfr 10 0 0 200 -diF/dt 1200 ns 1000 800 600 400 1.0 s 0.9 0.8 TVJ=100C VR=540V IRM trr 0.7 0.6 0.5 max. IF=30A IF=60A IF=30A IF=15A VFR tfr QR 0.4 0.2 0.0 0 40 TVJ 80 120 C 160 0.4 0.3 0.2 0.1 0 200 -diF/dt typ. TVJ=125C IF=30A 400 A/us 600 200 0 400 A/us 600 Fig. 4 Dynamic parameters versus junction temperature. Fig. 5 Recovery time versus -diF/dt. Fig. 6 Peak forward voltage versus diF/dt. Fig. 7 Transient thermal impedance junction to case. |
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